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Burn-in times for AD8620, 8610, etc. opamps - Page 2

post #16 of 24
2/17/10 at 6:41pm
Quote:
Originally Posted by majkel View Post
The BRZ sounds a bit warmer and smooth to me. I've got both in my collection and compared them in the DAC filter/buffer section.
The "B" suffix part is in fact the same as the "A", the only difference is in tighter DC offset specifications (most likely selected from the same production line during testing). Such difference should have absolutely no relevance to its "sound".
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post #17 of 24
2/17/10 at 7:00pm
Quote:
Originally Posted by amb View Post
The "B" suffix part is in fact the same as the "A", the only difference is in tighter DC offset specifications (most likely selected from the same production line during testing). Such difference should have absolutely no relevance to its "sound".
There you go again, trying to interject logic and reason into a discussion of burn-in.

Wouldn't opamp burn-in imply that there is also transistor burn-in, and by extension voltage-regulator burn-in, and diode burn-in, as well? I've experienced diode burn-out, but that's about it.

What next, heatsink burn-in? My SOHA's been on for around 9000 hours, now; I suspect the molecules in the heatsinks are all aligned harmoniously by now, or something. Must be why it sounds so good...
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post #18 of 24
2/17/10 at 7:02pm
lol.
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post #19 of 24
2/17/10 at 7:29pm
There is a very interesting thesis floating around the web somewhere (can't find it at the moment) where with electron microscopy it can be demonstrated that favoured electrical pathways in some semi conductor devices develop over a period of time. The author I seem to remember was from Cambridge University here in the UK; he called this process "electron burrowing".
Regarding Arz v Brz variants of the 8610 devices I am totally with Makjel on this; of course I understand the Brz chips are selected because of bettered DC performance but then it can be demonstrated that DC offset has a direct relationship on transient intermodulation distortion so this might have a bearing as to why the Brz chips sound noticeably better in every situation where I have used them.
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post #20 of 24
2/17/10 at 8:05pm
Quote:
Originally Posted by buggalugs View Post
...it can be demonstrated that DC offset has a direct relationship on transient intermodulation distortion
Please show me a study where this is demonstrated.

Btw, in typical audio amplifier applications, the kind of DC offset difference seen between the AD8620A part and AD8620B part should amount to no more than a couple of mVs.
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post #21 of 24
2/17/10 at 8:38pm
Quote:
Originally Posted by buggalugs View Post
There is a very interesting thesis floating around the web somewhere (can't find it at the moment) where with electron microscopy it can be demonstrated that favoured electrical pathways in some semi conductor devices develop over a period of time. The author I seem to remember was from Cambridge University here in the UK; he called this process "electron burrowing".
That sounds really cool. I'd love to read the thesis. Please post if you find it.
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post #22 of 24
2/17/10 at 11:37pm
some ppl believe that Electromigration and Annealing occur in CPU's...so it might also be happening in any IC.

some pictures here: Electro - Migration

the idea is that once the electrons have settled in and found the shortests paths(electricity is lazy), you get a more stable signal.
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post #23 of 24
2/18/10 at 12:10am
occam razor; simplest is probably the answer. break-in is more psychological, BY FAR. when someone buys gear and does not hear a 'significant diff' then its often explained away as 'needing more break-in time'.

see it for what it is, folks.
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post #24 of 24
2/18/10 at 3:18am
I don't believe in board-component burn-in.
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